METHOD OF MANUFACTURING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a contact hole of a semiconductor device is provided to decrease contact resistance by forming a bit line composed of a polysilicon layer and a tungsten silicide layer in the contact hole. CONSTITUTION: A method of manufacturing a contact hole comprises the steps of: forming a gate electrode(30) by etching a gate polysilicon layer(15) and a gate tungsten silicide layer(20) stacked on a semiconductor substrate(10), and forming a contact hole(50) by etching an insulating layer(45) on the gate electrode to expose the gate tungsten silicide layer; eliminating a tungsten oxide layer(35) stacked as a thin film on the gate tungsten silicide layer and remaining material of a photoresist layer(55) on the bottom of the contact hole, the remaining material being induced in stacking the photoresist layer, by processing Ar/O2 while etching the contact hole, and forming a passivation layer on the inside of wall of the contact hole; eliminating a damaged surface portion(60) on the gate tungsten silicide layer of the gate electrode by a rapid thermal process(RTP) annealing after eliminating the tungsten oxide layer and the remaining photoresist material(40) of a layer; and forming a bit line by immersing a polysilicon layer and a tungsten silicide layer into the contact hole.