METHOD FOR CONTROLLING CRYSTAL DEFECT OF SILICON WAFER AFTER ARSENIC ION INJECTION

摘要

PURPOSE: A method for controlling a crystal defect of a silicon wafer after arsenic ion injection is provided to form a shallow junction of a semiconductor device. CONSTITUTION: A method for controlling a crystal defect of a silicon wafer(11) after arsenic ion injection, comprises the steps of: growing a screen oxidation layer(14) having a boundary in the layer by a plurality of rapid thermal oxidation processes in order to minimize damage to the surface of the silicon wafer(11) caused by ion injections before arsenic ion injections; and minimizing crystal defect of the silicon wafer by injecting the arsenic ions, eliminating the screen oxidation layer and evaporating a low temperature oxidation layer(18) on the silicon wafer by atmospheric pressure chemical vapor deposition.