| 摘要 |
PURPOSE: A repair circuit for a flash memory is provided to minimize a size of a memory cell array and decrease a power consumption required in sensing by forming a repair circuit as one and controlling one repair circuit. CONSTITUTION: A control unit(20) receives a word line address, a bit line address, a sector address, a control signal, and an operation power and outputs a control signal for storing, removing, and reading an address for a repair. A flash memory cell array(30) stores an address of a cell in which an error is occurred according to the output signal of the control unit(20). An output unit(40) selects a sector according to the output signal of the control unit(20), reads data stored in a memory cell of the flash memory cell array(30), and writes a repair address in the flash memory cell array(30).
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