发明名称 BIPOLAR TRANSISTOR HAVING A WAVE STRUCTURE
摘要 PURPOSE: A bipolar transistor is provided to enhance an electric current capability of the emitter and collector by forming a first conductive-type collector region, a second conductive-type base region, and a first conductive-type emitter region. CONSTITUTION: A first conductive-type collector region is provided. A second conductive -type base region is formed on the collector region. A first conductive-type emitter region of which plain locus forms a curve is formed on the base region. An emitter electrode which is connected to the emitter region is further formed on the emitter region. The emitter electrode has a locus of a curve-type parallel with the emitter region, to thereby increase a peripheral length while maintaining the area of the emitter to achieve the cost reduction.
申请公布号 KR20000027004(A) 申请公布日期 2000.05.15
申请号 KR19980044803 申请日期 1998.10.26
申请人 FAIRCHILD KOREA SEMICONDUCTOR LTD. 发明人 HYUN, DONG HO;CHOE, BYUNG HA
分类号 H01L29/70;(IPC1-7):H01L29/70 主分类号 H01L29/70
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