发明名称 |
BIPOLAR TRANSISTOR HAVING A WAVE STRUCTURE |
摘要 |
PURPOSE: A bipolar transistor is provided to enhance an electric current capability of the emitter and collector by forming a first conductive-type collector region, a second conductive-type base region, and a first conductive-type emitter region. CONSTITUTION: A first conductive-type collector region is provided. A second conductive -type base region is formed on the collector region. A first conductive-type emitter region of which plain locus forms a curve is formed on the base region. An emitter electrode which is connected to the emitter region is further formed on the emitter region. The emitter electrode has a locus of a curve-type parallel with the emitter region, to thereby increase a peripheral length while maintaining the area of the emitter to achieve the cost reduction.
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申请公布号 |
KR20000027004(A) |
申请公布日期 |
2000.05.15 |
申请号 |
KR19980044803 |
申请日期 |
1998.10.26 |
申请人 |
FAIRCHILD KOREA SEMICONDUCTOR LTD. |
发明人 |
HYUN, DONG HO;CHOE, BYUNG HA |
分类号 |
H01L29/70;(IPC1-7):H01L29/70 |
主分类号 |
H01L29/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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