METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a damage of a gate electrode when performing a dry etching process by using a high density plasma insulator as a first insulating layer between layers. CONSTITUTION: A method for manufacturing a semiconductor device comprises the steps of: being divided into an active area and a field area, depositing a high density plasma insulator on an upper portion of a semiconductor substrate(100) and forming an etch blocking layer(110); depositing the high density plasma insulator on an upper portion of the etch blocking layer to form a first insulating layer between layers(112); forming a second insulating layer between layers(114) on an upper portion of the first insulating layer between layers and flatting the second insulating layer between layers; and etching the second and the first insulating layer between layers and the etch blocking layer and a metal contact hole(118,120) for exposing a gate electrode and the active area.