METHOD FOR FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A gate electrode formation method is provided to improve a uniformity of pattern by self-aligned patterning the gate electrode using etch-back and restrain a short-channel effect by forming the buried gate electrode. CONSTITUTION: A pad oxide and a nitride pattern are formed on a semiconductor substrate. Using the nitride pattern as a mask, a gate region is formed by wet etching the exposed semiconductor substrate. A gate electrode is formed by depositing a polysilicon layer on the gate region and etch-back. After removing the nitride pattern and the pad oxide, a lightly doped region is formed in the semiconductor substrate. Then, a gate side wall (30) is formed at both sides of the gate electrode.