摘要 |
PURPOSE: A column repair circuit is provided to decrease a chip size and perform a stable chip operation by simplifying a column repair circuit composition of a memory device into which a graphic function is inserted. CONSTITUTION: A first fuse box unit(30) outputs a repair column address signal(RYA012) with a certain level according to a fuse program. A second fuse box unit(40) outputs a column address signal(BKYA) with a certain level according to the fuse program. A decoding unit(50) receives the repair column address signal(RYA012) of the first fuse box unit(30) and the column address signal(BKYA) of the second fuse box unit(40), decodes the received repair column address signal(RYA012) and the received column address signal(BKYA), and outputs a redundancy column decoder enable signal(RCEb) with a certain level.
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