FAREXTRA-VIOLETPHOTORESISTMATERIALANDFINEPATTERNFORMINGMETHODUSINGTHESAME

摘要

PURPOSE: A deep ultraviolet, especially vacuum UV (VUV) photosensitive film and micro patterning method of semiconductor element are provided to effectively serve the production of high integrated semiconductor elements such as 1GB, 4GB DRAM and to improve etching-resistance and transparency at 193nm and to prevent deformation of pattern at micro patterning process. CONSTITUTION: The method for forming photoresist pattern comprises a first step of spreading a specific photoresist composition on upper part of etching layer to form a photosensitive film having a thickness of 0.5-1.2 micrometers; a second step of exposing the photosensitive film by conventional exposure device; and a third step of developing the film by light source having less than 250nm of wavelength such as ArF(193nm) or KrF(248nm) light and a specific developing solution of tetramethyl ammonium hydroxide (TMAH) in an amount of 0.01-5 wt.%. The photoresist composition contains a specific resin defined as formula consisting of indolyl acetate derivative having a dissolution control group (R1) to be substituted by acid as a first monomer; and acrylic acid or methacrylic acid as a second monomer.