SEMICONDUCTOR ELENENT ISOLATION LAYER MANUFACTURING METHOD

摘要

PURPOSE: A method for forming a field oxide is to prevent an occurrence of a bird's beak phenomenon during the growth of the field oxide, thereby securing a wide cell region and effectively forming the field oxide. CONSTITUTION: A silicon dioxide film(2) and the first silicon nitride film(3) are orderly formed on a silicon substrate(1). A selected portion of the dioxide film and the first silicon nitride film is selectively etched to expose a surface of the silicon substrate. An impurity ion is implanted into the exposed portion of the silicon substrate to form a field stop region(6). The second silicon nitride film(10) is formed on the entire surface of the resultant substrate. The second silicon nitride film formed right on the field stop region except the sidewall portions(10') of the first silicon nitride film, and the silicon dioxide film are removed to expose the field stop region. The field stop region is thermally oxidized to form a field oxide(20).