FABRICATION METHOD FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is to remove a by-product of a dry-etching process using HF solution, thus to prevent damage of an insulating layer on the sidewall of a contact window. CONSTITUTION: A wafer is provided in which an insulating layer(35) is deposited on a conductive layer. The insulating layer is selectively etched to form a contact window(36) for exposing a certain portion of the surface of the conductive layer. On the surface of the conductive layer exposed in the contact window is formed a native oxide layer, which is then removed by an anisotropic dry etching. To remove a by-product of the dry etching process, a cleaning is carried out in HF solution diluted by pure water. To prevent damage of the insulating layer on the sidewall of the contact window, the cleaning is carried out in the diluted HF solution for 20 seconds or less.