| 摘要 |
PURPOSE: A method of manufacturing an SOI(silicon on insulator) wafer is to use a dry chemical for removing an upper wafer, thereby decreasing a processing time and reducing a processing waste. CONSTITUTION: The method comprises a step of removing an upper wafer(3), using a dry chemical, with a predetermined thickness. The dry chemical is comprised of an HF(hydrogen fluoride) gas, an ozone gas and a vapor of an ultra purity. By the ozone gas, a thermal oxide(2) is formed on a surface of a silicon(1). The surface of the thermal oxide is rinsed and etched by the anhydrous gas and the vapor. An oxidizing velocity of the silicon by the ozone gas must be slower than an etching velocity of the silicon, which is made by the anhydrous HF gas and the ultra purity vapor. Within the dry chemical, an amount of the ozone gas is 1 to 5 SLPM(standard liter per meter), and the amount of the anhydrous HF gas being 150 to 250 SCCM(standard cubic centimeter), and the amount of ultra purity vapor being 5 to 15 SLPM.
|
