| 摘要 |
PURPOSE: An in plane switching mode LCD and manufacturing method simplify the manufacturing process by using only three masks, a mask for forming a gate electrode and a gate wiring, a mask for forming a source/drain electrode and a data electrode, and a mask for etching a passivation layer and an insulator layer. CONSTITUTION: After a metal such as Al, Mo, Ta or Al alloy is laminated on the first substrate(110), A gate electrode(105) and a common electrode(109) are formed by photoetching the laminated metal. SiOx or SiNx, a-Si and n+a-Si are laminated through the first substrate(110) by the plasma CVD method, and a metal such as Al, Cr, Ti or Al alloy is laminated on the first substrate(110) by the sputtering method. A source electrode(106), a drain electrode(106b) and a data electrode(108) are formed by etching a metal layer. An n+a-Si layer(116a) is etched by using the source (106), the drain (106b) and the data electrodes(108) as a mask. A passivation layer(120) is formed by laminating an inorganic matter such as SiOx or SiNx, or an organic matter such as BCB(benzocyclobutene) through the first substrate(110). A semiconductor layer(115) and a gate insulator layer(112) are formed in a TFT region by etching the passivation layer(120), an insulator layer(112a) and an a-Si layer(115a) simultaneously. The insulator layer(112a), the a-Si layer(115a) and the n+a-Si layer(116a) remain under the data electrode(108) inside a pixel region. |
