METHOD FOR MANUFACTURING TFT SUBSTRATE FOR LCD

摘要

PURPOSE: A method for manufacturing TFT substrate for LCD is provided to prevent the snapping of a wire of source/drain electrode, and to strengthen electrical connect between source/drain electrode and semiconductor layer. CONSTITUTION: A protecting film(700) is deposited and the deposited protecting film(700) is patterned using a fourth mask, and then a contact hole(710) is formed for exposing a drain electrode(620). An ITO layer is deposited on the protecting film(700) and the deposited ITO layer is patterned using a fifth mask, and then a pixel electrode(800) connected to the drain electrode(620) through the contact hole(710) is formed. Since the ITO is cut off in a groove type stepped difference portion(A) by an amorphous silicon layer(400) and a doped amorphous silicon layer(500) formed under a data line(630), a short between the pixel electrode(800) formed between the data line(630) is not occurred.