PATTERN FORMING METHOD OF FERROELECTRIC MATERIAL

摘要

PURPOSE: A method gor forming a ferroelectric material pattern is provided to enhance the durability and the characteristic of the semiconductor element by patterning the ferroelectric material with the exposing mask. CONSTITUTION: A system comprises a semiconductor substrate(11), a lower electrode material(13), a ferroelectric material(15) and a sensitive layer(27). The ferroelectric material pattern is formed by developing and exposing after pre-baking and exposing the ferroelectric material. A method comprises a step of forming the ferroelectric material by adding photo-sensitive liquid using the spin-coating method; a step of forming ferroelectric material pattern by developing and exposing the ferroelectric material; a step of forming drying the ferroelectric material; and a step of heat treating the ferroelectric material. Therefore, the ferroelectric material is formed by exposing and developing step without using extra etching process.