发明名称 METHOD FOR FORMING METAL FILM PATTERN
摘要 PURPOSE: A method for patterning a metal film is provided to prevent the corrosion of a pattern side wall due to a polymer layer containing chlorine generated in an etching process. CONSTITUTION: A method for patterning a metal film comprises: a step of etching for forming a metal film pattern, and a passivation step of for preventing corrosion performed right after the etching step of. The metal film pattern consists of double layer structure of different material. The passivation step of is performed with gas such CHF3 or CH4 containing fluorine. The passivation step of is also performed under the pressure of 50-100 MT.
申请公布号 KR20000026378(A) 申请公布日期 2000.05.15
申请号 KR19980043887 申请日期 1998.10.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SEON HUN
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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