THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A thin film transistor and a method of fabricating the same are to increase a field effect mobility and reduce an off leakage current and an optical leakage current, thereby improving a picture quality. CONSTITUTION: A gate electrode(31) is formed on a semiconductor substrate(30). A gate insulating layer(32) is formed on an entire structure. A channel layer(330) is formed on the gate insulating layer. The channel region includes a micro crystalline silicon layer(33A) and an amorphous silicon layer(33B). The micro crystalline silicon layer increases field effect mobility. The amorphous silicon layer includes chlorine, which reduces an optical and electrical conductivity. The amorphous silicon layer is deposited by a PECVD(plasma enhanced chemical vapor deposition) method. The amorphous silicon layer is selected from the group consisting of SiH2Cl2/SiH4 and SiCl4/SiH4.