| 摘要 |
PROBLEM TO BE SOLVED: To uniformly heat a wafer and a contacter, when burn-in in a state of a wafer is performed. SOLUTION: A main heater heating a wafer tray 11 accommodating a wafer, and a subheater 14 for heating a contacter 13 which is in contact with an electrode of a semiconductor chip on the wafer and applies a signal are installed. A DUT substrate 15 supplies a signal to the contacter 13. A temperature adjuster is operated on the basis of a temperature of the wafer tray 11, a temperature of the contacter 13, and a temperature where the temperature of the contacter 13 is subtracted from the temperature of the wafer tray 11. Through the use of PID control, heating speeds of the main heater, which is brought into contact with the wafer tray 11 and the subheater 14 for heating the contacter 13 are optimized, temperature rising speed of the wafer tray heated with the main heater, is made to match with temperature rising speed of the contacter 13 heated with the subheater 14, the temperature difference between the wafer 12 and the contacter 13 is precluded, and the temperature rise of the wafer tray 11 and the contacter 13 is made uniform. As a result, stable heating can be made in a burn-in in a wafer state.
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