| 摘要 |
PURPOSE: A method for manufacturing a split gate flash memory device is provided to prevent a bridge from being generated on a transistor gate by conducting an ion doping process on a periphery circuit region on which an arc-nitride layer after the transistor gate is formed on the periphery circuit region. CONSTITUTION: In a method for manufacturing a split gate flash memory device, a tunnel oxide layer(131), a floating gate(132), a dielectric layer(133), a control gate(134) and an oxide layer(135) are formed on a cell region of a semiconductor substrate. Then, a polysilicon layer(137A) and a metal silicide layer(137B) are formed on a periphery circuit region of the semiconductor substrate, thereby forming a polycide layer(137C), after which a select gate is formed by patterning a portion of the polycide layer(137C). Then an arc-nitride layer(140) is formed on the substrate while covering the select gate(137S) and the transistor gate(137T), and ions are doped on the periphery circuit region. Finally, the arc-nitride layer(140) on the periphery circuit region is etched.
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