SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD

摘要

PURPOSE: A semiconductor apparatus and method are provided to simplify the manufacturing process applying a metal layer for silicide manufacture into an interconnection layer. CONSTITUTION: A silicide is formed on a polysilicon region by depositing and heat-treating a metal layer(3) on an upper portion of a substrate(1) where a plurality of semiconductor devices are manufactured. A dielectric layer(5) is formed on an upper portion of the metal layer(3) between a predetermined region of the semiconductor device by etching the dielectric layer(5) using etching process in using a photoresist pattern as an etching mask. Both the metal layer(3) exposed around in the dielectric layer(5) and the photoresist pattern are removed. And, an oxide film is deposited both on the silicide exposed by removing the metal and the photoresist pattern and the upper portion of the dielectric layer(5), then an external metal wire is selectively formed in the predetermined region of the plurality of semiconductor devices using a metal process.