| 摘要 |
PURPOSE: A plasma etching device for manufacturing semiconductor element is provided to control the etching ratio and the evenness at the same time by controlling the distance between the wafer and the coil. CONSTITUTION: A plasma etching device comprises a vacuum chamber, a wafer(120), a high density plasma, a separating means(160), and a coil(180). The coil(180) is installed in a certain distance from the surface of the wafer(120) in order to make high density plasma at the vacuum chamber. The separating means(160) is to separate the coil from the vacuum chamber. The high frequency power is applied at the coil(180) and form induction electric field. The wafer(120) is etched by the high density plasma which is occurred due to the induction electric field.According ti rhe distance between the coil and the wafer, the etching ratio is controlled.
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