METHOD FOR MANUFACTURING STATIC RANDOM ACCESS MEMORY CELL

摘要

PURPOSE: A method for manufacturing static random access memory(SRAM) cell is provided to increase a cell ratio without increasing a chip size. CONSTITUTION: A method for manufacturing static random access memory(SRAM) cell including a driver transistor, a resistance element and an access transistor, comprises: the first step of forming a trench by selectively etching a silicon substrate(11) on which a gate oxidation layer(11) for the access transistor is formed; the second step of forming a gate oxidation layer of the access and driver transistors, and burying the gate oxidation layer in the trench; the third step of forming a gate electrode of the access and driver transistors; the fourth step of injecting impurity ions to form source/drain of the access and driver transistors; and the fifth step of performing a thermal process to diffuse the impurity ions injected in the fourth step.