| 摘要 |
PURPOSE: A method of manufacturing fully depleted SOI(Silicon On Insulator) device is provided so that a short process to manufacture a fully depleted SOI is realized without increasing a resistance of a source/drain junction region. CONSTITUTION: An ion implantation prevention layer is coated on a single-crystal silicon layer(33) formed on a buried insulating layer(32). By etching, a portion of the single-crystal silicon layer(33) is exposed and defined as gate(37). The opposite type of doping area is formed adjacent to the buried insulating layer(32), The exposed single-crystal silicon layer is oxidized selectively, and the prevention layer is removed. By dopant ion implantation to the single-crystal silicon layer(33), source-drain junction region(40) is formed.
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