| 摘要 |
PURPOSE: A thin film actuated mirror array and a method for manufacturing the same are to improve the dielectric characteristic of a transformed layer by preventing atoms of the transformed layer from being diffused. CONSTITUTION: An active matrix(100) includes the first metallic layer(115) extended from a source(110) and a drain(120) of a metal oxide semiconductor transistor, the first passivation layer(130) formed on the first metallic layer, the second metallic layer(130) formed on the first passivation layer, the second passivation layer(140) formed on the second metallic layer, and an etching stop layer(145) formed on the second passivation layer. An actuator(190) includes a supporting layer(160) with one side contacted with a portion of the first metallic layer and an air gap(155) interposed between the other side and the first metallic layer, a lower electrode(165) formed on the supporting layer, a transformed layer(170) formed on the lower electrode, an upper electrode(175) formed on the transformed layer, and a via contact(185) formed in a via hole(180) vertically formed from one side of the transformed layer to a drain pad of the first metallic layer through the lower electrode, the supporting layer, the etching stop layer, and the second and first passivation layers.
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