CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD FOR FORMING COPPER FILM USING THE SAME

摘要

PURPOSE: A CVD(chemical vapor deposition) device and a method of forming a copper layer are to control surface deposition using thermal energy, thereby obtaining a superior copper metallization. CONSTITUTION: Through an MFC(mass flow controller)(114), gas such as Ar, He, H2, N2 enter a vaporizer(112). A copper source is connected to a deposition path(200). A copper source vessel(111) contains the copper source. The copper source vessel is maintained on a room temperature. To obtain an optimal deposition characteristic, hydrogen is added to the deposition path. An inner wall of the deposition path and a gas injector(210) are preheated to prevent condensation of the copper. The deposition path is connected to a vacuum source. A deposition gas injected into the deposition path is excited by thermal energy. By this excitation, a copper film is extracted on a wafer and discharged to a gas discharge port(240).