| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is to prevent a leakage current and to simplify a manufacturing process. CONSTITUTION: A pad oxide layer, a polycrystalline silicon layer(3) and a nitride layer (4) are sequentially formed on a silicon substrate(1). The nitride layer and the polycrystalline silicon layer of a field region are selectively etched to form an oxidation-preventing pattern on an active region. A buffer layer(33) is formed on the entire structure. The first channel stopper is formed by an implantation process. A nitride layer is formed on the entire structure and etched to form nitride spacers(6) contact with the buffer layer of sidewalls of the oxidation-preventing layer. The buffer layer, which is uncovered with the nitride layer, is removed to expose the pad oxide layer. The exposed pad oxide layer is removed. The silicon substrate is etched to form a trench in the field region. The second channel stopper(300) is formed by implanting impurity ions to the trench. A field oxide layer(7) is formed by an oxidation process. The nitride layer, the nitride spacers, the polysilicon layer and the buffer layer are removed.
|
