METHOD OF FORMING CONTACT HOLE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact hole is to improve the reliability of a device by forming a contact hole having a wide opening without performing a wet etching process. CONSTITUTION: The first BPSG(borophosphosilicate glass) layer(21) is formed on a semiconductor substrate(20) having a predetermined lower layer. The first BPSG layer is partially etched by a dry etching process, using the first etching mask. The second BPSG layer is formed on the resultant structure, and is flowed by performing a flow thermal process. The second BPSG layer is etched in the entire surface thereof by a dry etching process, thereby forming the first contact hole having a hemisphere groove shape. A photoresist is formed on the resultant structure. A photoresist pattern is formed to coat an end of the first contact hole by using the second mask. The second contact hole is formed to expose a part of the semiconductor substrate by selectively etching the first BPSG layer in the first contact hole. A wineglass type contact hole is formed by removing the remaining photoresist pattern.