METHOD FOR MANUFACTURING HIGH CAPACITY SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing high capacity semiconductor device is provided to increase etching selection ratio and reduce aspect ratio, and to reduce costs by forming a photoresist pattern serving as a sacrificial oxide film and a mask. CONSTITUTION: A method for forming high capacitive semiconductor device comprises steps of: forming a contact hole; forming a first conductive layer; forming a photoresist pattern; patterning the first conductive layer; forming a side well spacer; forming a storage electrode; forming a capacitive insulator film; and forming a plate electrode. The contact hole is formed on an interlayer dielectrics to expose an active area of the substrate. The photoresist pattern is formed by selectively etching the other portion except photoresist material.