METHOD FOR MANUFACTURING A BODY CONTACT SILICON ON INSULATOR

摘要

PURPOSE: A method is provided to remove the floating body effect, enhance punch-through characteristics, and reduce a junction leakage current by securing an exact impurity distribution. CONSTITUTION: A silicon substrate(20), a burial insulator layer, and a upper silicon layer(22)are provided on a silicon on insulator wafer. A trench(14) is formed on the upper silicon layer(22). An electric field cut-off ion injection region(15) is formed on the upper silicon layer(22) of a lower portion of the trench(14). An insulator is buried in the trench(14). A MOS transistor and a well electrode for adjusting a channel potential of the MOS transistor are formed on the upper silicon layer(22). An initial thickness of the upper silicon layer(22) ranges from 150 to 300nm.