METHOD FOR MANUFACTURING INTEGRATED INJECTION LOGIC USING HETEROJUNCTION BIPOLAR TRANSISTOR

摘要

PURPOSE: An integrated injection logic fabrication method is provided to increase current gains and breakdown voltage of base-collector junction and to reduce a base resistance by using a horizontal PNP transistor and an NPN HBT(heterojunction bipolar transistor). CONSTITUTION: An integrated injection logic comprises an NPN HBT of collector structure and a horizontal PNP bipolar transistor(500). In the NPN HBT, B+ ions are injected up to an emitter layer(203) through a sub-collector(206), a collector layer(205) and a base layer(204), so that up-beta current gains are increased and multi-collector regions are electrically isolated each other. In the horizontal PNP bipolar transistor(500), a base is formed on a compound semiconductor epitaxial layer(208), so that base-collector breakdown voltages are increased. Then, Si+ ions are injected up to the epitaxial layer(208) and a grounded electrode(214) is formed on the epitaxial layer.