METHOD OF FORMING METAL WIRE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a metal wire of a semiconductor device is provided to precisely define a via hole reducing internal capacitance. CONSTITUTION: A method of forming a metal wire comprises the steps of: forming a spin-on-glass(SOG) layer(23) on a semiconductor substrate(20) having a conductive layer pattern(22); etching the SOG layer to expose the surface of the conductive layer pattern; hardening the surface of the SOG layer; forming an interlayer dielectric(21) on the entire surface; and forming a via hole(25) by etching the insulating layer to expose a part of the conductive layer pattern.