METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming metal wiring of a semiconductor device is provided to remove a hardened photoresist and a polymer in an upper edge of a metal layer pattern, by performing an etching process for eliminating the photoresist with gas including F instead of N2 gas. CONSTITUTION: A method for forming metal wiring of a semiconductor device comprises the steps of: forming a metal layer for wiring on an insulating layer(100) between layers; forming a polymer and hardening a part of a photoresist layer pattern, when forming a metal layer pattern(102a) by etching a metal layer until a surface of the insulating layer is exposed, by using the photoresist layer as a mask; and eliminating the hardened photoresist and the polymer, when removing the photoresist layer pattern by using an O2 gas and gases including F.