| 摘要 |
PURPOSE: An MOSFET(metal oxide semiconductor field effect transistor) and a manufacturing method thereof are to form a barrier layer in an edge portion of a gate electrode, so that halo ions for enhance of short channel feature are not diffused into the edge portion of the gate electrode, thus to prevent increase of threshold voltage of a device. CONSTITUTION: A barrier layer(22) is formed on the first conductive substrate(21) in constant distance. An epitaxial layer grows on the entire surface of the substrate to cover the barrier layer. A gate insulating layer(23) is formed on a certain region of the epitaxial layer, and then a gate electrode(24) is formed on the gate insulating layer. Impurity ions are implanted into the epitaxial layer on both sides of the gate electrode to form an LDD(lightly doped drain) region(25). On the substrate under the barrier layer, halo ions are implanted to form the second conductive impurity region(26). Impurity ions are implanted into the epitaxial layer including the substrate on both sides of the gate electrode, to form the third source/drain impurity region.
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