METHOD TO FORM A METALLIC LAYER ON THE LONG WALL OF THE SEMI-CONDUCTOR DEVICES HIGH

摘要

PURPOSE: An improvement of a semi-conductor about its character and confidence gets accomplished by the metallic layer of a long wall having the high density and having the stability through plasma heat treatment. CONSTITUTION: A method to form a metallic layer on the long wall of the semiconductor devices is provided by the followings; a procedure to form a contact hole (120) to a chosen area of the insulation film (110) between the layers, after forming an insulation film (110) between the layers onto a semi-conductor substrate to be formed a conductive pattern; a procedure to form the metallic layer on the long wall of the film of titanium/titanium nitride onto whole structure containing the above contact hole (120); a procedure to apply a plasma heat treatment on a semi-conductor substrate to be formed the metallic layers (130) of a long wall for stabilizing the metallic layer of a long wall; a procedure to form the metal line distribution electrically connecting the semi-conductor substrate through the above contact hole (120).