| 摘要 |
PURPOSE: A capacitor of semiconductor element is provided to prevent the contact defect of the source area and the capacitor due to bird's beak by not forming the field oxide process. CONSTITUTION: A system comprises a semiconductor substrate(21), a gate line(22), a gate oxide layer(23), an active area(24), a source area(24a), a drain area(24b), a first sensitive layer, an interlayer dielectrics(26), a second sensitive layer, a storage electrode(28), a conductive layer(29), and a plate electrode. The gate insulation layer is formed on the gate line. The active area is formed to cross the gate line. The source area and the drain area are formed on the surface of the active area. The conductive layer is formed on the storage electrode. The interlayer dielectrics has the contact hole and is formed on the source area.
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