METHOD FOR FORMING PLUG OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A plug formation method is provided to prevent a damage of a poly gate and a spacer by using two-step plug formation processes using double insulators having double contact holes. CONSTITUTION: A first insulating layer(30) is deposited on a poly gate(20) and a spacer(25). A first contact hole is formed by etching the first insulating layer(30). A first plug(50) is formed by filling into the first contact hole(40). After depositing a second insulating layer(60) on the resultant structure, a second contact hole connected to the first plug(50) is formed. Then, a second plug(85) is formed by filling to the second contact hole.