METHOD FOR MANUFACTURING TFT LCD

摘要

PURPOSE: A method for manufacturing TFT LCD is provided to improve a field mobility of a TFT(Thin Film Transistor) by forming a source region and a drain region as an OHmic contact layer. CONSTITUTION: A metal film for a gate electrode is deposited on a upper portion of a glass substrate(10) and the deposited metal film is patterned as a certain shape, and then a gate electrode(11) is formed. A gate insulating film(12) is deposited on a upper portion of the glass substrate(10) at a certain thickness. An amorphous silicon layer(13) is formed on a upper portion of the gate insulating film(12) using a PECVD(plasma enhanced chemical vapor deposition) method. The amorphous silicon layer(13) and the gate insulating film(12) are patterned for having a shape of a thin film transistor. A protecting layer(16) is deposited on a upper portion of a result material. A certain portion of an OHmic contact layer(130) located at both sides of the gate electrode is exposed. Source and drain electrodes(17a,17b) are formed to be contacted with the exposed OHmic contact layer(130).