| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a ferroelectric RAM is provided to improve reliability of a downstream process by eliminating a residual etching substance and polymer using a mixture of NH4F and ethylene glycol without damaging an under layer. CONSTITUTION: In a method for manufacturing a capacitor of a ferroelectric RAM, an interfacial insulating layer(11) provided with a storing electrode contact is first formed on a substrate, then a bonding layer, a Pt layer for a lower electrode, and a ferroelectric layer are formed on the insulating layer in this order, after which a photoresist pattern is formed on the ferroelectric layer except for a portion where the storing electrode is supposed to be formed. Then the Pt layer and the ferroelectric layer are etched using the photoresist pattern as a mask, then the photoresist pattern is removed. A residual etching substance and polymer is rinsed using a mixture of NH4F and ethylene glycol.
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