| 摘要 |
PROBLEM TO BE SOLVED: To prevent a malfunction due to multiple selection between a disconnected word line and a normal word line easy to occur when wiring of a low resistance side is disconnected in a semiconductor memory of a word-suspension structure connecting here and there the wiring that the word line is formed on a wiring layer of low resistance and the wiring formed on the wiring layer of high resistance and making parallel them. SOLUTION: The word line is made a parallel structure connecting here and there two pieces of wiring of the wiring 11 of a second aluminum layer of the low resistance and the wiring 13A of a polysilicon layer of the high resistance through the wiring 14 of a first aluminum layer being a middle layer. One end of the wiring 13A of the polysilicon layer is directly connected to an output point of a word line driver 10A with a direct contact technique. When disconnection occurs in the wiring 11 of the second aluminum layer, the output of the word line driver becomes 'L' at a non-selection time. The 'L' level is transmitted to the wiring 13A of the polysilicon layer, and the potential of the disconnected word line is coerced to the potential at the non- selection time. |
