METHOD OF FORMING METAL WIRING ON SOI SUBSTRATE

摘要

PURPOSE: A method for metalization is to round an edge of a surface silicon layer during a mesa etching that is an isolation method, thus to prevent disconnect of the metal interconnect. CONSTITUTION: An SOI(silicon-on-insulator) layer(3) is epitaxial grown in thickness required to manufacture a device. Then, an oxide layer is grown on a silicon wafer(1). The oxide layer is grown to the thickness of from 50 to 500 nm according to the thickness of the SOI. The silicon layer in the field region is etched using an anisotropic etching solution such as NAOH or TMAH(tetramethyl ammonium hydroxide), after selectively removing the oxide in the field region with the photolithography. The edge of the silicon layer is rounded by isotropically etching the same after removing the oxide layer on the wafer with HF solution.