INDUCED ELECTRODE ASSEMBLY OF SEMICONDUCTOR ION IMPLANTING FACILITIES

摘要

PURPOSE: An induced electrode assembly of semiconductor ion implanting facilities is provided to reduce the number of parts, simplify a shape and improve induction efficiency of ion beam by eliminating an insulator housing and a suppression cap guide and directly fixing the insulator and the suppression cap in the facilities. CONSTITUTION: An induced electrode assembly of semiconductor ion implanting facilities comprises: a ground electrode plate to which voltages of both polarities are applied to induce a path of ion beam extracted from an ion source; a suppression electrode plate to which a negative voltage is applied; an insulator for insulating the ground electrode plate and the suppression electrode plate from each other; a funnel-shaped suppression cap formed to pass the ion beam; a tube-shaped ground cap formed inside a penetrating hole to pass the ion beam; and an extraction aperture formed to pass the ion beam at a side.