| 摘要 |
PURPOSE: A GaN laser diode and an LED(light emitting diode) are provided to increase hole implantation efficiency by lowering a barrier between a AlGaN having p-type clad layer and a GaN. CONSTITUTION: A first conduction-type GaN electrode layer, a first conduction-type AlGaN/GaN clad layer, active layer, a second conduction-type AlGaN/GaN clad layer and a second conduction-type GaN electrode layer are included in a GaN semiconductor laser diode and LED. Al(y)Ga(1-y)N interlayer is formed to reduce energy band gap between Al(x)Ga(1-x)N and GaN at least on either of the two AlGaN/GaN clad layers, wherein y in Al(y) has a gradient to a thickness direction.
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