METAL WIRE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A metal wire formation method is provided to improve a yield and prevent etching of aluminum in a contact hole while mis align is generated between the contact hole and the metal wire. CONSTITUTION: An insulating layer(32) having a plurality of contact holes is formed on a semiconductor substrate(31). A first barrier layer(33), an aluminum layer(34) and an ARC(anti-reflection coating) layer(35) are sequentially formed on the resultant structure and partially etched, thereby forming metal wires on the contact hole. A second barrier side wall (37) is formed at both sides of the metal wires being not expose the aluminum formed in the contact hole. Then, the remained aluminum layer(34) and first barrier layer(33) are over-etched using the ARC layer(35) and the second barrier side wall (37) as a mask.