A FABRICATION METHOD OF POWER TRANSISTORS USING COMPOUND SEMICONDUCTORS

摘要

PURPOSE: A method for fabricating a compound semiconductor device is to improve a coating characteristic by forming a via hole using a wet etching process, an ion implantation process and an ECR(electron cyclotron resonance) plasma dry etch process. CONSTITUTION: A pad electrode pattern(22) is formed on a compound semiconductor substrate(21). The compound semiconductor substrate is wet etched to a predetermined thickness using double etching mask patterns(23,24) which are formed beneath the compound semiconductor substrate. An ion implantation process to an exposed compound semiconductor substrate is carried out. A dry etch process is carried out to expose a portion of the pad electrode pattern. The double etching mask patterns are removed. A coating layer is formed according to a step difference of the compound semiconductor substrate. The pad electrode pattern is implemented with nickel, titanium, platinum and gold. The compound semiconductor substrate is formed to a thickness range of 50 micrometers to 100 micrometers.