SELF-ALIGNED CONTACT PAD OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: An SAC(self-aligned contact) pad and method for manufacturing the same are provided to improve a reliability, an aspect ratio and an etching selectivity by merging a storage node and a bit line contact regions into T-shape. CONSTITUTION: A gate body structure including a gate conductive layer, multiple gate masks(180,200) and a gate spacer(260) is formed on a semiconductor substrate(100) spaced apart from each other. For forming SAC(self-aligned contact) pads, a mask pattern having T-shaped open region is formed. Using the mask pattern, interlayer dielectrics(360) are etched to expose the semiconductor substrate(100), wherein the second layer(200) of the gate mask is under-cut. After filling a pad conductive layer a flattening etching process is performed using the second layer(200) of the gate mask as an etch stopper, thereby SAC contact pads(460a,460b) are formed.