| 摘要 |
PURPOSE: A method for forming a silicide film is to improving a contacting resistance between an electrode and an active region. CONSTITUTION: After a gate oxide film(2) is formed on a semiconductor substrate(1), a polysilicon film(3) and the first titanium film(4) are deposited on the gate oxide film, and are performed by a photolithography process to form a predetermined pattern. A TEOS film is deposited on the entire surface of the substrate, and it is etched to form an oxide spacer(5) on a sidewall of the polysilicon gate. An active region(6) is formed on the substrate using a process of a lightly doped drain ion implantation. The second titanium film(7) is deposited on the entire surface of the substrate. After the substrate is performed by a high thermal oxidizing process, the residual titanium films are removed to form a silicide film on the gate electrode and the active region.
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