发明名称 ELECTRO STATIC DISCHARGE PROTECTING CIRCUIT
摘要 PURPOSE: An ESD(electro static discharge) protecting circuit is provided to improve an output current of data input/output(DQ) pins and reduce pin capacitance by further comprising bipolar transistors and a resistor. CONSTITUTION: A circuit comprises a pull-up transistor(T1) connected between a power supplied voltage(Vcc) and a DQ pin, and a pull-down transistor(T2) connected between a ground(Vss) and the DQ pin. The circuit further comprises a first bipolar transistor(T3) formed between the Vcc and the DQ pin and connected in parallel with the pull-down transistor(T2), a second bipolar transistor(T4) formed between the Vss and the DQ pin and connected in parallel with the pull-up transistor(T1), and a resistor(R1) connected between the DQ pin and the pull-up and pull-down transistors(T1,T2).
申请公布号 KR20000027612(A) 申请公布日期 2000.05.15
申请号 KR19980045567 申请日期 1998.10.28
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 KIM, HYUN GON
分类号 H01L27/04;(IPC1-7):H01L27/04 主分类号 H01L27/04
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