SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A device is provided to broaden a process margin in a lithography process together with a chip area reduction by reducing the number of transistors in the sub word line driver into one. CONSTITUTION: A PMOS-type pull-up transistor is connected between a word line boosting signal input terminal(px0) and sub word lines(SWL00-SWL23) and connected to a main low decoder output signal terminal(A) through the gate thereof. A pull-down transistor is interconnected to first and second NMOS transistors. Plural sub word line drivers(20-27) for driving the sub word lines(SWL00-SWL23) are provided. Only the pull-up transistor is arranged in the sub word line drivers(20-27) and the pull-down transistor is arranged in the main low decoder.