发明名称 |
GAS SUPPLIER OF DEPOSITION DEVICE FOR MANUFACTURING SEMICONDUCTOR |
摘要 |
PURPOSE: A gas supplier of a deposition device supplies the backside of a wafer with heated gas so that the rate of deposition uniformity of a wafer is advanced. CONSTITUTION: When gas for processing is supplied in the processing chamber(30), heated gas within the range of temperature inside the processing chamber(30) is supplied to the back of the wafer(40) from the gas injection hole(32a). During the process for deposition, temperature controller(52) supplies a thermal wire(48) with current and the heat is sensed by temperature sensor(50).
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申请公布号 |
KR20000027189(A) |
申请公布日期 |
2000.05.15 |
申请号 |
KR19980045058 |
申请日期 |
1998.10.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG, JONG KI |
分类号 |
H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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