| 摘要 |
PURPOSE: A method for manufacturing an integrated injection logic device having multi-collectors separated by an insulation layer is provided which has a high current gain, a planarized structure, a low base resistance of a heterojunction bipolar transistor and an increased breakdown voltage of a base-collector junction. CONSTITUTION: A method for manufacturing an integrated injection logic device comprises the steps of: sequentially forming a first conductive emitter cap layer(202), a first conductive emitter layer(203), a second conductive base layer(204), a first conductive collector layer(205) and a first conductive sub-collector layer(206) on a compound semiconductor layer; selectively etching the sub-collector layer, the collector layer and the base layer in the region other than an activation region of the first bipolar transistor; forming at least one groove by selectively etching the collector layer inside of the activation region to separate the collector layer inside of the activation region of the first bipolar transistor into at least two parts; filling an insulation layer(208) in the groove; forming an epitaxial layer(209) of a first conductivity on the exposed emitter layer; injecting a second conductive impurity ions into at least two portions of the epitaxial layer region to form a second bipolar transistor, the ions being injected into the depth of the emitter layer; injecting a first conductive impurity ions, using a mask covering the first and second bipolar transistors, to penetrate the emitter layer; and forming input electrode(212), output electrode(213) and injection electrode(212, 213, 214) in the second conductive impurity ion injection region and the sub-collector layer.
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