METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

摘要

PURPOSE: A method for forming a TFT(thin film transistor) using a bottom gate electrode of SRAM is provided to prevent a degradation and improve a uniformity of a gate insulator by forming a contact after depositing a channel polysilicon. CONSTITUTION: A bottom electrode(10) is formed by depositing a polysilicon layer on a silicon substrate. A gate insulator(20) is formed on the bottom electrode(10). A channel polysilicon layer(40) is formed on the resultant structure. After patterning the channel polysilicon layer(40) and the gate insulator(20) so as to form a contact, a plug polysilicon layer(50) is formed.